As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

The demand for smartphones and tablets with better performance and longer battery life has been driving the industry to come up with chips that are faster, smaller and use less power. To remain on ...

Samsung today announced that it's begun mass producing 14nm LPP (Low-Power Plus) logic chips based on its three-dimensional (3D) FinFET process. The South Korean chip maker also confirmed that ...

SANTA CLARA, Calif.--(BUSINESS WIRE)--Aprisa™ and Apogee™, ATopTech’s place and route solutions, have been certified for the version 1.0 Design Rule Manual (DRM) of TSMC’s 16nm FinFET process .

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...