【摘要】针对硅基绝缘栅双极型晶体管（IGBT）难以进一步满足电动汽车高功率密度、低导通损耗、高散热能力等需求的不足，综述了车用碳化硅金属氧化物半导体场效应晶体管（SiC-MOSFET）的最新研究进展。通过总结SiCMOSFET 在电动汽车牵引逆变器、DC/DC 电源变换 ...

Could hybrid-electric aircraft help significantly reduce the carbon footprint of commercial aviation? The data collected from the first all-up test flight of EcoPulse, a hybrid-electric distributed ...

Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...

本文介绍了新的CoolSiC™ 2000V SiC沟槽栅MOSFET系列。该系列单管产品采用新的TO-247PLUS-4-HCC封装，具有加大的爬电距离和电气间隙，使用.XT焊接芯片技术。芯片同时用于62mm封装的半桥模块和EasyPACK™ 3B封装的升压模块。这些产品的性能提高了系统功率密度，可靠性和 ...

本文介绍了新的CoolSiC™ 2000V SiC沟槽栅MOSFET系列。该系列单管产品采用新的TO-247PLUS-4-HCC封装，具有加大的爬电距离和电气间隙，使用.XT焊接芯片技术。芯片同时用于62mm封装的半桥模块和EasyPACK™ 3B封装的升压模块。这些产品的性能提高了系统功率密度，可靠性和 ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...

本文介绍了Force-I QSCV技术， 解释了如何在Clarius软件中使用这些测试，将该技术与其他方法进行了比较，验证了 Force-I QSCV 在测量速度、稳定性、精度及设备需求方面的显著优势··· 电容-电压 (C-V) 测量广泛用于半导体材料和器件表征，可提取氧化物电荷 ...

Apex Microtechnology, a provider of high-power analog components, recently announced the launch of the SA110, a high-current, high-voltage half H-bridge that the company claims is the first module to ...

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...

Electric vehicle, commercial transportation, renewable energy and storage system designers can benefit from silicon carbide stack solution that drives performance and cost efficiencies and accelerates ...