As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and ...

This innovation successfully addresses the challenge of dual-mode operation in non-volatile memory, offering compatibility with silicon-based semiconductor processes for large-scale integration. The ...

Researchers reduce the total thickness of capacitor stacks while maintaining strong polarization properties. (Nanowerk News) Modern electronic technology is rapidly advancing towards miniaturization, ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite being just 30 nm thick including top and bottom electrodes—making it ...

A new study outlines progress toward making bulk ferroelectric and antiferroelectric hafnia available for use in a variety of applications, including high-performance computing. Scientists and ...

Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study. Compared to existing ferroelectric materials, these films ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 There has been a fair amount of coverage in the last couple ...

In a specific crystal phase, hafnium oxide, or hafnia, exhibits ferroelectric properties that scientists have been trying to leverage for years. Theorists at the University of Rochester helped take an ...

The first article in this series considered the use of ferroelectrics to improve subthreshold swing behavior in logic transistors. The prospects for ferroelectrics in logic applications are uncertain, ...

Join our daily and weekly newsletters for the latest updates and exclusive content on industry-leading AI coverage. Learn More The Ferroelectric Memory Company (FMC), a startup developing ...